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Kinetic study of wet oxidation of Si_(0.5)Ge_(0.5) alloy by Rutherford backscattering spectroscopy

Kinetic study of wet oxidation of Si_(0.5)Ge_(0.5) alloy by Rutherford backscattering spectroscopy
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摘要 The oxidation of Si0.5Ge0.5 alloy has been investigated at the tempera-tures of 800℃ and 900℃. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Si0.5Ge0.5O2 layer formed during the oxidation at 800℃, whilst three layers, Si0.5Ge0.5O2, SiO2 and Ge, are existed after the oxidation at 900℃. Experimental rcsults are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon. The oxidation of Si0.5Ge0.5 alloy has been investigated at the tempera-tures of 800℃ and 900℃. Rutherford backscattering spectroscopy has been employed to determine the composition and thickness of the oxide layers. Only Si0.5Ge0.5O2 layer formed during the oxidation at 800℃, whilst three layers, Si0.5Ge0.5O2, SiO2 and Ge, are existed after the oxidation at 900℃. Experimental rcsults are interpreted by adding a germanium flux F4 in Deal-Grove oxidation model of Silicon.
作者 ZHANG Jing-Ping1,2 CHEN Chang-Chun2 LIU Jing-Hua ZHU De-Zhang XIE Dong-Zhu PAN Hao-Chang(Institute of Semiconductors, Shandong Normal University, Jinan 250014,Laboratory of Nuclear Analysis Technology,Shanghai Institute of Nuclear Research,the Chines
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2000年第2期114-118,共5页 核技术（英文）
关键词 Si0.5Ge0.5合金 硅锗合金 卢瑟福散射 散射光谱 氧化 动力学研究 半导体材料 Si_(0.5)Ge_(0.5) alloy, Wet oxidation, Ratherford backscatteing spectroscopy (RBS)
分类号 TN304 [电子电信—物理电子学]
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参考文献10

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Nuclear Science and Techniques
2000年 第2期

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