500V压集成电路LCH1016的研制

Development of A 500V High Voltage Integrated Circuit LCH1016

本文采用N阱硅栅CMOS工艺和自绝缘偏移栅高压MOS器件结构。研制出500V高压集成电路LCH1016。重点讨论了高压器件结构对击穿电压的影响及其导通电阻特性。给出了LCH1016的电路逻辑、版图设计及工艺参数控制.

A 500V high voltage integrated cir(?)uitLCH1016 has been developed by using N-wellSi-gate CMOS process and self-isolatedoffset-gate high voltage MOS device struc-ture.The relation between high voltagedevice structure and breakdown voltage andcharacteristics of R(?) has been analysed.Thecircuit and logic,layout design and processparameter selection has been deseribed.