摘要
本文系统地研究了p-n结自致停精密腐蚀时的J-V特性,腐蚀自致停时电流变化的性状和实现这种精密腐蚀的关键工艺,同时也探讨了这种自致停腐蚀样品表面粗糙度、腐蚀速率与工艺参数及其他条件的关系,目的在使其能成为一种实用化的技术。 p-n结自致停腐蚀克服了p^(+)自致停腐蚀的缺点,且又保持了硅各向异性腐蚀的特性。
p-n Junction Etch-stop has same advantages over p+ etch-stop and retains all the anisotropic etching chracteristics, but it is still seldem used in practice. This peper describes the current density vs voltage relationship, the etch-stop behavior, the special technology process, the etch-rate in a p-n junction etch-stop and the surface roughness after a p-n junction etch-stop. I view of this, the p-n junction etch-stop will become a reliable micromachining technology.
出处
《传感技术学报》
CAS
CSCD
1991年第4期1-7,共7页
Chinese Journal of Sensors and Actuators
基金
国家自然科学基金资助项目