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离子束合成的钇硅化物结构相变研究

Structural phase transformation in yttrium silicide prepared by ion beam synthesis
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摘要 为了获得高品质的欧姆接触和线路连接材料,利用离子注入方法在n型单晶Si(111)基底上制备了钇硅化物,并对其在高真空下红外光辐照处理过程中的结构相变进行了研究.X射线衍射测量表明,在Y离子注入过程中已形成了部分六方相YSi2,800℃下红外光辐照处理30min后YSi2呈现出择优结晶取向.从辐照过程中原位测量样品的方块电阻变化发现,当温度升至160℃时,Y与Si反应首先形成了斜方相YSi.YSi/YSi2的相转变出现在240°C,随温度的进一步升高,Y原子完全与Si原子发生反应,形成了结晶取向良好的六方相YSi2. To develop advanced interconnect materials with longer lifetimes and lower resistivities for use in integrated circuits, yttrium silicide layers were formed by implantation of 100 keV yttrium ions with a doses of 1×10^(18) cm^(-2) into (111) oriented n-type silicon wafers. The structural phases of the compound layers have been characterized by X-ray diffraction. It was shown that YSi_2 phase was formed during the implantation and a subsequent infrared-irradiation annealing of the samples under 800 ℃ for 30 min led to a (101) preferential growth. The in situ measurement of in situ sheet resistance during infrared-irradiation showed that the reaction between Y and Si occurs at a temperature of 160 ℃, while the phase transformation from YSi to YSi_2 takes place at 240 ℃.
机构地区 兰州大学物理系
出处 《材料科学与工艺》 EI CAS CSCD 2003年第4期370-371,共2页 Materials Science and Technology
基金 国家自然科学基金资助项目(10175030) 高等学校优秀青年教师教学科研奖励计划资助项目.
关键词 钇硅化物 离子注入法 单晶硅 X射线衍射 超大规模集成电路 线路连接技术 yttrium silicide ion implantation solid phase reaction in situ sheet resistance
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参考文献5

  • 1[1]VANDRES, KALKA T, PREINESBERGER C, et al.Epitaxial growth and electronic structure of lanthanide silicides on n - type Si ( 111 ) [ J ]. J Vac Sci Technol B, 1999, 17: 1662-1690.
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