氧化生成的锗纳米结构的量子受限分析(英文)

Quantum Confinement Analysis of Ge Nanostructures in Oxidation of SiGe Alloys

研究了硅锗合金的氧化行为,首次发现快氧化生成的锗纳米膜复盖在氧化层上。在PL谱中,我们发现与锗纳米结构相关的一些新的谱峰。量子受限模型和新的算法被给出,较好地解释了PL谱的分布和形成机理。

Author investigate the oxidation behavior of Si1-xGex alloys(x =0.05,0. 15 and 0. 25). We have found a nanocap on the oxide film after fast oxidation, in which there are many Ge nanoparticles. Some new peaks in PL spectra related to the Ge nanocap,the Ge nanolayer and the Ge nanoparticles in various diameters are discovered. Some suitable model and several new calculating formulas with combining UHFR method and quantum confinement analysis can be provided to interprete the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.