摘要
铝栅自对准电路具有集成度高和性能价格比高等优点。本文从离子注入与合金(退火)两方面着手,研究铝栅自对准工艺。成功地研制出可与国外样品互换的铝栅自对准电路。
Al-gate self-aligned devices have the advantages of high integration density and high ratio of performance to price. In this paper, the Al-gate self-aligned technology is examined by investigating both ion implantation and annealing. Al-gate self-aligned devices, interchangeable with their foreign counterparts, have been successfully fabricated using this technology.
出处
《微电子学》
CAS
CSCD
1992年第1期19-22,共4页
Microelectronics
关键词
自对准工艺
离子注入
集成电路
Self-aligned technology, Low temperature annealing, Ion implantation