摘要
采用结型场效应管作为输入级的专用集成电路,一般都具有高速宽带以及高输入阻抗的特点。场效应管与双极型器件相结合,已成为新型专用型集成运算放大器的主要发展方向之一。国内在这些专用集成电路的研制工作中所面临的主要困难,是高耐压高频结型场效应对管的工艺制作。本文在介绍高性能结型场效应对管在ASIC中的应用及其工艺试验情况。
ASICs using junction FET in the input stage usually have the features of high -speed, wide-band and high input impedance. The combination of FETs with bipolar devices has become one of the tendencies of development for novel,specifically integrated op amps. A big challenge to the development of this type of ASICs is the fabrication process for high-voltage, high-frequency pair JFETs. An experiment on the processing of high performance pair JFETs is described, as well as its application to ASICs.
出处
《微电子学》
CAS
CSCD
1992年第2期23-27,共5页
Microelectronics
关键词
高频管
JFET对管
集成运放
ASIC
High-voltage/high-frequency transistor, Pair JFET, Integrated op amplifier, ASIC