高速自隔离三重扩散技术研究

A Self-Isolation Technique by Triple-Diffusing for High-Speed Applications

本文介绍双极IC中自隔离的三重扩散(3D)技术的特点和工艺路线,给出了采用全离子注入工艺制作的器件特性,探讨了工艺技术中的关键问题,指出,浅结离子注入与退火条件的选择是影响器件性能的主要因素。

The features of a self-isolation technique by triple-diffusing for bipolar ICs are introduced and its process flow is given in the paper.The property of devices fabricated with all ion-implantation process is described and critical problems in the process are investigated.It is concluded that the shallow junction ion-implantation and the selection of annealing conditions are the major factors affecting the device performances.