高精密CMOS能隙基准源的研究

Investigation Into Precision CMOS Band-Gap Reference Sources

本文设计和研究了与n阱CMOS工艺兼容的高精密CMOS能隙基准源电路。该电路实现了全温度曲率补偿,降低了运放失调电压对精度的影响。理论上证明,具有极好的温度特性。SPICE模拟表明,精度可达到<3ppm/℃,实验芯片亦达到预期结果。

The design of a precision CMOS band gap reference source that is compa-tibel with n-well CMOS technology is resented and investigated. The effect of offset voltage on the accuracy is significantly reduced due to the realization of full temperature curvature compensation. Theoretically, the circuit has excellen temperature characteristics. SPICE simulation shows that the accuracy of <3ppm/℃ is obtainable and experimental chips also have reached the intended goal.