用p埋层CMOS工艺制造横向磁敏晶体管

Fabrication of LateraliMagnetotransistor Using Buried p-Layer CMOS Technology

本文介绍了一种用P埋层CMOS工艺制造的横向磁敏晶体管(LMT)。器件结构是双基极、双集电极npn晶体管。它具有抑制侧向注入效应,即将注入集中于发射区的中部,在中性基区的少数载流子受到双重偏转作用,消除了横向无功电流。在CMOS工艺的基础上加了P埋层,消除了纵向无功电流。器件对磁场有良好的线性响应。

A lateral magnetotransistor made with buried p-layer CMOS technology is described. The device is constructed with a double base, double collector npn transistor. In the device,the lateral injection effect is suppressed,that is,the injection will be concentrated in the middle of the emitter area and the minority carriers in the neutral base area is double deflected, thus climinating the lateral reactive current. The buried p-layer is to eliminate the vertical reactive current. The device has an excellent linear response to magnetic field.