砷预非晶制作结深小于0.25μm的浅结

Fabrication of Shalbow Junction Under 0. 25μm Using As Preamorphization Scheme

本文报道了As预非晶制作浅P^+n结,对As预非晶的能量和剂量的选择作了研究,并对常规炉退火(950℃,N_2,30m)和快速热退火(RTA,1050℃,10_s)作了比较。结果表明,A_s预非晶可有效地抑制B^+注入沟道效应,阻止B^+增强扩散,在常规条件下可以实现x_j<0.25μm,R_□<100Ω/□的源漏浅结,并已应用于1M位DRAM生产。

The fabrication of p+n junction by As preamorphization is reported in the oaper. The choice of energy and dosage for As preamorphization was examined. A comparison has been made between the conventional furnace annealing (950℃ , N2. 30m) and rapid thermal annealing (1050℃ , 10s) . It is found that As preamorphization can effectively suppress injected B+ channel effect and prevent B+ enhanced diffusion. Under normal conditions, a source-drain shallow junction of xj<0. 25μm and R□<100Ω/□ can be fabricated.