高压高阻断增益的水平沟道场控晶闸管

A Lateral Channel Field-Controlled Thyristor With High Voltage and High Forward Blocking Gain

水平沟道场控晶闸管(简称LFCT)是由垂直沟道场控晶闸管发展而来的,它具有开关速度快、与集成电路工艺兼容等特点。我们采用刻蚀V型槽来代替栅扩散,已制成最大正向阻断电压为200V,可关断电流为2A的LFCT,其正向电压阻断增益达40～200。

Lateral channel field-controlled thyristor (LFCT), which is developed on the basis of vertical channel field-controlled thyristor, has the advantages of high switching speed and compatibility with IC process. In this paper, an LFCT with a forward blocking voltage as high as 200V and a blocking current of 2A is introduced, which is formed by using V-grcove etching instead of gate diffusion. The forward blocking gain for the structure is up to 40-200.