高性能硅双极器件的发展

Advances on High Performance Si Bipolar Devices

以ECL电路为主,讨论了硅双极器件近期的发展。简述了VLSI中ECL电路结构和性能之后,着重讨论双极器件的按比例缩小、结构的改进以及相关的工艺技术的发展,最后分析了双极器件的低温工作性能。

Advanes on ECL-based Si bipolar devices are reviewed. A simple description is given to ECL circuit configurations and their performances in VLSI ICs,followed by a detailed discussion on device scaling,structure modifications and developments of related process technologies. Finally, low temperature operation performances of bipolar devices are analyzed.