硅光电二极管飞秒激光损伤的实验研究

Experimental research on damage in Si optoecetrical diode due to femtosecond laser radiation

对 6 0飞秒 80 0nm激光辐照下硅PIN光电二极管的信号饱和、损伤及失效进行了实验测量。实验得到硅PIN光电二极管的失效阈值为 1.2J/cm2 ,损伤阈值比失效阈值低一个量级。飞秒脉冲辐照后 ,存在 10 -4s量级的饱和时间 ,辐照后对信号光的响应在短时间内出现不规则变化 ,在长时间内随脉冲能量密度增大而降低。

The saturation time, damage and failure of Si PIN optoelectrical diodes being irradiated by 800nm fs laser with pulse duration of 60fs have been measured. Experiment gives out that the failure threshold of the Si PIN diodes is 1.18Jcm-2, while the damage threshold is one order of magnitude lower. There is a 10-4s level saturation duration following the fs laser irradiation. The variance of response of diodes to constant reference light is irregular in short time, but after a few minutes the response falls down while the pulse energy increases.