噻吩和3-甲基噻吩共聚膜及复合膜的红外光谱

FT-IR of Copolymer Film and Multiple Film of Thiophene and 3-Methylthiophene

采用扩散电流控制法,通过限制低氧化电位单体的浓度,从而限制它在高电位下的氧化电流,以达到减少它在聚合物中的相对含量的目的,成功地实现了噻吩(Th)和3-甲基噻吩(MTh)的电化学共聚。红外光谱及循环伏安测定分别表明,电化学共聚噻吩和3-甲基噻吩所制得的导电膜不是均聚物的共混物,共聚的方式也不是嵌段共聚,而更可能是无规共聚。此外,制备了噻吩/3-甲基噻吩导电复合膜,其吸波频率较单一导电聚合物有明显拓宽,在400cm-1～7000cm-1范围内有强的宽吸收。实验结果表明,复合膜的结构、层数、厚度以及层间微结构对红外吸收展宽效应都有影响。

A conductive copolymer film of thiophene(Th) and 3-methylthiophene(MTh) was obtained successfully by using potentioststic method. The product polymer was confirmed to be a random copolymer and not a composite or a blend of PTh and PMTh through FT-IR, cyclic voltammogram and the theoretical calculations. A multiple film of PTh/PMTh also was prepared by electrochemically controlling the thickness and the number of layers. It was found that there is a strong absorption of the multiple films with PTh/PMTh structure in the wide range of 400cm^(-1) to 7000cm^(-1).