摘要
本文介绍了铌酸锂晶体在四氟化碳气氛中的反应离子刻蚀。对刻蚀参数的选择原则从机理上加以探讨,并对掩膜的选择进行了试验,最后得到线宽为3.5mm的铌酸锂光栅和槽深为1.1mm的铌酸锂沟道的刻蚀样品。
The reactive ion etching of LiNbO3 in CF4 plasma is reported. The priciples for choosing the etching parameters are studied from the mechanism and the choosed different masks are tested. As a result, the etching samples of LiNbO3 gratings with 3.5 nm line width and LiNbO3 grooves with 1.1 um depth have been obtained.
出处
《微细加工技术》
1992年第1期35-38,共4页
Microfabrication Technology
关键词
集成光学
铌酸锂
反应离子刻蚀
Integrated optics
LiNbO3
Reactive ion etching
