摘要
本文结合我们的科研工作,阐述了半导体器件工艺模拟中的离子注入模型,并指出,由于离子注入具有能精确控制工艺参数,并能在较大面积上形成薄而均匀的掺杂层等特点,因此在工艺模拟中选用合适的离子注入模型对于提高工艺模拟的精确性是十分重要的。
The ion implantation model in the process simulation for semiconductor devices is described.It is indicated that the selection of proper ion implantation model is very important for improving the accuracy of process simulation because of the abilities of ion implantation for accurately controlling the process parameters and forming thin and even doping layer on the large area.
出处
《微细加工技术》
1992年第2期15-20,共6页
Microfabrication Technology
关键词
半导体器件
离子注入
模型
ion implantation
model
process simulation
