金刚石线切割多晶硅片的表面织构研究

Study on the Surface Texture of Diamond Wire-cut Polycrystalline Silicon Wafer

采用HNO_(3 ):HF:H_2O=5:1:3.4和HNO_(3 ):HF:H_2O=8:1:3.4两种腐蚀液体系,研究了HNO_3浓度、腐蚀液温度、腐蚀时间对金刚石切割多晶硅片表面腐蚀的影响,分析了制绒后的多晶硅表面形貌与表面反射率的关系.实验结果表明:HNO_(3 ):HF:H_2O=5:1:3.4腐蚀液体系优于HNO_(3 ):HF:H_2O=8:1:3.4腐蚀液体系;在HNO_(3 ):HF:H_2O=5:1:3.4腐蚀液体系,腐蚀液温度为9℃,腐蚀时间为100 s的条件下,获得均匀的表面刻蚀纹,具有较低的表面反射率,其平均反射率低于19%.

In this paper,the performances of the surface texture of diamond wire-cut polycrystalline silicon wafer have been studied by using HNO3:HF:H2O =5:1:3.4 and HNO3:HF:H2O = 8:1:3.4 acid etching liquid system.The effect on the surface texture of diamond wire-cut polycrystalline silicon wafer of the HNO3 concentration,the etching liquid temperature and the etching time have been studied.The relation of surface morphology of silicon and the reflectivity has been analyzed.The results show that using HNO3:HF:H2O =5:1:3.4 etching liquid system can be obtained better effectiveness of surface texture than that of using HNO3:HF:H2O =8:1:3.4 etching liquid system.It have been obtained that the uniform surface etching stripes and the low surface reflectivity,using the etching condition:HNO3 :HF:H2O =5:1:3.4 etching liquid system,temperature at 9 ℃ and the etching time 100 seconds.And the average reflectivity is lower than 19%.