红外光子牵引探测仪中P型锗元件最佳参数的研究

An Investigation of the Optimal Parameters of P-type Ge Element in Photon Drag Infrared Detector

本文对红外(10.6μm)光子牵引探测仪中P型锗的吸收系数与电阻率的关系进行了讨论。导出了P型锗对10.6μm光的吸收系数的简便公式。进而根据理论分析,给出了光子牵引探测仪锗棒的电阻率、长度及截面等最佳参数的选取原则和结果。利用文章中的公式可以很方便地计算锗元件参数和响应率。本文对光子牵引探测仪的制作有一定的指导意义。

In this paper, the relation between resistivity and light absorption coefficient of P-type Ge at 10.6 μm wave length has been discussed for photondrag infrared detector. Absorption coefficient of P-type Ge at 10.6μm wave leng-th is given in concise formula. Furthermore, according to the theoretical analysis,the principle selecting the optimal parameters of resistivity, length and cross sec-tion of P-type Ge bar and the calculating results of the optimal parameters hasbeen given in photon drag infrared detector. The parameters of Ge element andresponsivity of photon drag detector may be calculated very conveniently by for-muias in this paper.