半导体激光器模式和参数的综合测量

A Comprehensive Measurement of the Mode and Parameters for Semiconductor Lasers

一、前言半导体激光器在现代光电技术中是十分重要的器件。为了研制性能优良的激光器,必须对激光器的激射模式和重要参数进行测最研究。过去。

A comprehensive measurement method of the mode and parameters for semiconductorlasers is described in this paper.By using this method,threshold current,light output power,L-I cha-racteristics,near-field,lasing spectrum of devices can be measured and observed without moving mea-sured samples.In these parameters,transverse mode near-field and corresponding longitudinal modespectrum are simultaneously measured.This method is applied to the study of mode behavior in semi-conductor lasers.