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封装基板CO_2激光直接钻通孔工艺研究 被引量:2

Research of CO_2 laser direct drilling for VIP in IC substrate
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摘要 文章就应用于封装基板的CO2激光直接钻通孔工艺进行了深入的探讨,对制作开口孔径为70 mm的通孔进行流程和参数优化。通过JMP软件设计优化试验,分析了各加工参数(脉宽、能量、枪数、光罩等)对开口孔径和孔真圆度的影响,并得出了最佳加工参数。最佳工艺参数为:脉宽7.1 ms,能量6.9 mj,光罩1.9 mm,枪数2shot,同时微蚀量控制在(0.6~0.8)mm,以此加工所得开口孔径为70.96 mm,真圆度为97.26%。在此基础上,对孔的可靠性能进行验证,验证结果证实了孔的可靠性能良好。 This paper carried on thorough discussion of CO2 laser direct drilling process of IC Substrate, and optimized the process and parameter of making VIP(Via in Pad) whose via size is 70μm. It used JMP software design optimization experiment and analyzed the influence of parameters(pulse width, energy, the number of pulses, mask size.ect.) on via size and roundness, and finally got the best parameters. The optimal parameters: pulse width 7.1μs, energe 6.9mj, mask 1.9mm, pulses 2shot. In the meantime, this experiment controlled the etch amount between 0.6μm and 0.8μm, through this process, the via size is 70.96μm, the roundness is 97.26%. On this basis, this experiment verified the reliability of the laser via and confirmed the reliability of the laser via is good.
出处 《印制电路信息》 2015年第3期81-86,共6页 Printed Circuit Information
关键词 封装基板 CO2激光直接钻孔 通孔 优化试验设计 JMP IC Substrate CO2 Laser Direct Drilling VIP(Via in Pad) DOE JMP
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  • 1Harman, George G., Johnson, Christian E. Wire bonding to advanced copper, low-k integrated circuits, the metal/dielectric stacks, and materials considerations[J]. IEEE Transactions on Components and Packaging Technologies, 2002,25:677-683.
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  • 3Chylak, Bob; Kumar, Suresh; Perlberg, Gil. Optimizing the wire bonding process for 35-mm ultra-fine-pitch packages[C].Proceedings of SEMICON Singapore 2001 Technical Symposium, 2001, Singapore.
  • 4Kripesh, Vaidyanathan. Wire bonding process impact on low-k dielectric material in damascene copper integrated circuits[C]. Proceedings of the 2002 Electronic Components and Technology Conference, 2002. 873-880.
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