期刊文献+

瞬时电离辐射敏感开关设计及效应分析

Design and Effect Analysis of Sensitive Switch for Transient Ionizing Radiation
下载PDF
导出
摘要 采用瞬时辐射敏感开关可避免电子器件在瞬时电离辐射环境下发生闩锁而失效或损毁。性能较好的开关须满足灵敏度高、抗辐射、抗干扰、驱动能力强等要求。本工作在RC延时电路的基础上设计了放电型和充电型两种辐射敏感开关,并通过瞬时电离辐射实验对两种开关的敏感度、关断时间稳定度、抗干扰能力进行了测试。结果表明,放电型开关的关断时间稳定度和抗干扰能力不及充电型开关,且探测单元采用晶闸管较采用二极管或三极管综合性能好;充电型开关更适合用于多次脉冲辐射环境,但开关中的缓冲单元输入端不能含有静电保护电路,否则影响开关关断时间。 Using transient radiation sensitive switch can prevent latch-up or damage for electronic devices in transient ionizing radiation environment.High performance switch should meet the requirements:high sensitivity,anti-radiation,anti-interference and high driving performance.Discharging-type and charging-type switches were designed based on RC delay circuit,and two switches' sensitivity,cutoff duration stability and anti-interference performance were tested in transient ionizing irradiation experiments.The results show that the cutoff duration stability and anti-interference performance of discharging-type switch are worse than that of charging-type switch,and the detector in discharging-type switch is better to use silicon-controlled rectifier than to use diode or bipolar.Charging-type switch fits to be used in multiple-pulse radiation environment,but the input of the buffer in switch could not contain electro-static discharge(ESD)circuits because it could affect the cutoff duration of the switch.
出处 《原子能科学技术》 EI CAS CSCD 北大核心 2014年第S1期712-716,共5页 Atomic Energy Science and Technology
关键词 瞬时电离辐射 开关 闩锁 transient ionizing radiation switch latch-up
  • 相关文献

参考文献4

二级参考文献35

  • 1NEAMEN D A.半导体物理与器件[M].赵毅强,译.3版.北京:电子工业出版社,2005.
  • 2Adams J R, Sokel R J. Neutron irradiation for prevention of latchup in MOS integrated circuits[J].IEEE Trans Nucl Sci, 1979, 26(6): 5069-5073.
  • 3Ochoa A, Dawes W. Latchup control in CMOS integrated circuits[J].IEEE Trans Nucl Sci, 1979, 26(6): 5065-5068.
  • 4Huffman D D. Prevention of radiation induced latchupin commercially available CMOS devices[J].IEEE Trans Nucl Sci, 1980, 27(6): 1436-1441.
  • 5许献国 徐曦 胡健栋.抑制体硅CMOS器件闭锁的新方法[A]..第十二届全国核电子学与核探测技术学术年会论文集[C].云南昆明,2004.401-403.
  • 6Murray J R. A 1k shadow RAM for circumvention applications[J].IEEE Trans Nucl Sci, 1991, 38(6): 1403-1409.
  • 7Rudie N J. Principles and techniques of radiation hardening[Z]. California: Western Periodicals Company, 1986.
  • 8杨怀民.80C31单片机系统伽玛剂量率闭锁窗口现象研究[A]..第六届全国抗辐射电子学与电磁脉冲学术交流会论文集[C].四川绵阳,1999.30-37.
  • 9Schroeder J E. Latchup elimination in bulk CMOS LSI circuits[J].IEEE Trans Nucl Sci, 1980, 27(6): 1735-1738.
  • 10特劳特曼RR 嵇光大 卢文豪[译].CMOS工艺中的闭锁-问题与解决办法[M].北京: 科学出版社,1996..

共引文献8

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部