超化学剂量Sb_2Se_3的Sb对Sb-Se系统非晶半导体晶化行为的影响

Effects of Extra Sb in Sb_2 Se_3 Stoichiometry on the Crystallization Behavior of Amorphous Semiconductor of Sb-Se System

本文采用 DSC、XRD、TEM 和瞬态反射率 R—温度 T,分析了 Sb_2Se_3,SbSe 和 Sb_3Se_2薄膜的非品析晶过程,研究了超化学计量 Sb_2Se_3的 Sb 对晶化行为的影响,发现晶体形貌和析品速率随着超量 Sb 的增加而变化。在薄膜中,Sb 起着晶核作用,加快析晶速率。

In this paper,DSC.XRD.TEM.and Transient R-T were used to investigatethe amorphous crystalline transformation of Sb_2Se_3,SbSe and Sb_3Se_2 films,and tostudy the effects of extra quantity Sb of stoichiometry Sb_2Se_3 on their crystalliza-tion behavior.It was found that the morphology of crystallite and the rate of cry-stallization were changed with the increasing amount of the extra quantity of Sb.In films Sb could act as the nucleation center and speed up the rate of crystalliza-tion.