掺杂卤素对非晶态As_2Se_3中隙态的影响

Effects of Halogen Doped on the Gap States of Amorphous As_2Se_3

本文研究的卤素掺杂非晶态 As_2Se_3中电子能级结构、发现材料的费米能级 E_F、深陷阱密度 N_P 以及ημτ输运参数值强烈地依赖于卤素的电负性,从中展示了在隙态中卤素浅能级的相对位置。

In this paper,energy level in halogen doped amorphous As_2Se_3 Was investigated.The change of E_F,Np and ημγ strongly depended on the electronegativity of varioushalogens.These results reveated the halogen defect level position in gap states ofamorphous As_2Se_3.