a-Si∶H/a-Ge∶H超晶格的界面特性研究

Investigation on Interfaces of a-Si:H/a-Ge:H Superlattices

本文用红外(IR)和拉曼(Raman)谱研究了反应溅射 a-Si∶H/a-Ge∶H 超晶格的界面特性.定量分析发现,界面处没有因应力释放引起的 H 富集,不存在由超晶格结构引起的界面结构无序,界面处存在着～(5±2)(?)的 Si、Ge 组分混合层.我们对结果进行了初步分析.

The vibrational spectrum of the interfaces in reactive-sputtering a-Si:H/a-Ge:H superlat-tices was investigated by using IR transmission and Raman scattering.It is shown that no excessdeformation is found near the interface;there is no evidence for excess H at the a-Si:H/a-Ge:Hinterface.By modeling the Raman spectrum of superlattices as a linear superposition withthose of amorphous silicon,germanium and a silicon-germanium allay,we have shown that theinterface between as-grown a-Si:H and a-Ge:H consists of 1～2 mono-layer(5±2)(?) of randomlymixed Si and Ge.Results are discussed preliminarily.