纳米GaP材料的介电特性

Dielectric Characteristics of GaP Nanomaterial

对在 45 0℃条件下进行 1h普通烧结制得的纳米GaP块体 (～ 5 1nm)的相对介电常数 (εr)、介电损耗 (tgδ)与频率 (f)、温度 (T)的关系进行了研究。测量结果表明 :烧结温度对纳米GaP块体的相对介电常数和介电损耗具有显著的影响 ;几种介电特性和测量频率、温度关系曲线的特征符合由德拜介电极化理论进行分析得出的结论。在介电特性温度谱图上出现极值 ,表明在外电场作用下纳米GaP块体存在界面极化、转向极化和松弛极化等几种主要极化机制 ;同时 。

The relationship between the relative dielectric constant ( ε r) or dielectric loss (tg δ ) and measuring frequency ( f ) or temperature ( T ) for GaP nanomaterial sintered at 450 ℃ for 1 h was studied. It demonstrates that sintering temperature has significant effect on the dielectric characteristics of GaP nanomaterial. The characteristics of ε r～ f , ε r～ T , tg δ ～ f and tg δ～T curves coincides with the conclusions based on Debye Equations. Several modes of polarization, such as space charge polarization, orientational polarization and relaxation polarization, exist in GaP nanomaterial by the action of external electric field. This arises mainly because a peak appears in both ε r～ T and tg δ ～ T curves. In addition, the emergency of a subsidiary peak in the above mentioned curves indicates that a main complex defect may be existed in GaP nanomaterial.