摘要
LECGaAs晶片经高温退火后 ,残余应力得以部分释放 ;从而减小残余应力诱生断裂的可能性 ,提高了GaAs晶体的断裂模数。原生GaAs晶片加工的样品的断裂模数平均值约为 13 5MPa ,经退火的GaAs晶片加工样品的断裂模数平均值更高 ,约为 15 0MPa ,断裂模数最高值达 163MPa。
The residual stress in as grown LEC GaAs can be released greatly by high temperature annealing, thus high temperature window wafer annealing leads to increasing modulus of rupture of GaAs. After mechanical chemical polishing, the average value of modulus of rupture for as grown GaAs samples is about 135 MPa, and the average value of modulus of rupture for annealed GaAs samples is 150 MPa and the highest value about 163 MPa.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2003年第6期849-851,共3页
Chinese Journal of Rare Metals
基金
863项目资助 ( 715 0 9 0 2 0 3 )
关键词
GAAS
断裂模数
退火
GaAs
modulus of rupture
annealing
