卢瑟福背散射实验确定离子注入型半导体可饱和吸收镜研制过程中的注入剂量研究

Research on Ion-implantation Defined by Rutherford Back Scattering Channel Effect During the Manufacture of Semiconductor Saturable Absorption Mirror

通过测量卢瑟福背散射沟道谱和随机谱,掌握了一种可以对制作离子注入型半导体可饱和吸收镜过程中离子注入的剂量进行选择的方法。

By the measurement of Rutherford back scattering channel spectrum and random spectrum, a method to choose appropriate dose of ion implantation during the manufacture of semiconductor saturable absorption mirror is given.