掺杂ZnO-V_2O_5压敏电阻的低温烧结

Low Temperature Sintering of Doped ZnO-V2O5 Varistors

对掺杂ZnO-V2O5压敏电阻的低温烧结特性及电性能进行了研究.研究结果表明:通过添加硼酸铅锌玻璃“形成”氧化物PbO和B2O3使其在常规电烧结炉中的烧结温度降低到了800℃,并使非线性特性明显提高,添加6wt％(PbO+B2O3)的样品经800℃ 4h烧结后,其非线性系数和漏电流密度可分别达到22.5,7.2×10-6A/cm2.

The low-temperature sintering characteristics and electrical properties of ZnO-V2O5 varistors were studied through adding oxides with low melting point, which were the lead zinc borate glass frit forming materials. The results show that the sintering temperature is significantly, decreased to 800degreesC with conventional electric furnace sintering and the nonlinear properties are obviously enhanced through adding B2O3 and PbO. When the sample with co-doped 6wt% (PbO+B2O3) sintered at 800degreesC for 4h, its leakage current density J(L)=7.2x10(-6)A/cm(2) and nonlinear coefficient alpha=22.5.