新型压电晶体La_3Ga_5SiO_(14)的生长及特性

Crystal Growth and Characterization of New Piezoelectric Crystals La_3Ga_5SiO_(14)

用提拉法成功地生长了La3Ga5SiO14(LGS)单晶,用X-ray粉末衍射证明了其单晶结构,测得沿Y、Z方向的热膨胀系数分别为5×10-6K-1、3.8×10-6K-1,在453.15K时测得晶体的比热为0.90J/g·K,并在200～800nm之间测其透过谱,测得了其全部压电及弹性常数。

La_3Ga_5SiO_(14) (LGS) single crystals have been successfully grown using Czochralski technique. The X-ray powder diffraction (XRPD) of single crystal was performed to identify the crystal structure. The data of thermal expansion coefficients along Y and Z direction have been measured to be 5×10^(-6) K^(-1) and 3.8×10^(-6) K^(-1), respectively. The specific heat of the crystal has been measured to be 0.90 J/gK at 453.15 K. The transmittance spectra range from 200 to 800 nm were measured. Whole set of piezoelectric and elastic constants were measured.