Ga_2S_3∶Eu^(2+)和SrGa^(2+x)S_(4+y)∶Eu^(2+)系列荧光粉的发光性能研究

Luminescent Properties of Ga_2S_3∶Eu^(2+) and SrGa_(2+x)S_(4+y)∶Eu^(2+) Phosphors

采用高温固相法合成了Ga2S3∶Eu2+和SrGa2S4∶Eu2+系列荧光粉。发现Ga2S3∶Eu2+的发射峰位于570nm附近,SrGa2S4∶Eu2+的发射峰位于535nm附近。同时进一步探讨了SrGa2+xS4+y∶Eu2+体系中,过量的Ga对发光的影响,通过漫反射光谱和XRD谱确定过量的Ga是以Ga2S3的形式存在于SrGa2S4相中;通过荧光光谱发现过量的Ga并不引起SrGa2S4∶Eu2+发射峰的位移,而是增强其在400～520nm处激发峰的强度,从而增强Eu2+在535nm处的发光强度。

Ga_2S_3∶Eu^(2+) and SrGa_(2+x)S_(4+y)∶Eu^(2+) phosphors were synthesized by high temperature solid state method. The luminescence of Eu^(2+) in Ga_2S_3 and SrGa_2S_4 was observed with the emission peak at about 570 and 535 nm, respectively. Based on this result, the luminescent properties of series of SrGa_(2+x)S_(4+y)∶Eu^(2+) phosphors were studied. It is found that the excess Ga can enhance the luminescent intensity of Eu^(2+) at 535 nm. This phenomenen is owing to the increase of excitation intensitiy between 400 and 520 nm. The XRD and reflection spectrum show that there are the mixtures of Ga_2S_3 with SrGa_2S_4 phase in the series of SrGa2+xS4+y∶Eu^(2+) phosphors when Ga is in excess.