RF-MBE生长AlN/GaN超晶格结构二维电子气材料

Two-Dimensional Electron Gas Materials with AlN/GaN Superlattice Structure Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

用射频等离子体辅助分子束外延技术 ( RF- MBE)在 c面蓝宝石衬底上外延了高质量的 Ga N膜以及 Al N/Ga N超晶格结构极化感应二维电子气材料 .所获得的掺 Si的 Ga N膜室温电子浓度为 2 .2× 10 1 8cm- 3,相应的电子迁移率为 2 2 1cm2 /( V· s) ;1μm厚的 Ga N外延膜的 ( 0 0 0 2 ) X射线衍射摇摆曲线半高宽 ( FWHM)为 7′;极化感应产生的二维电子气室温电子迁移率达到 10 86cm2 /( V· s) ,相应的二维电子气面密度为 7.5× 10 1 2 cm- 2 .

High-quality GaN films and AlN/GaN polarization-induced two-dimensional electron gas (2DEG) materials are grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE).Electron mobility and electron concentration of the grown GaN film doped with Si at room temperature are 221cm 2/(V·s) and 2.2×10 18cm -3,respectively.The full width at half maximum (FWHM) of GaN (0002) X-ray rocking curve of the GaN film is 7′.Electron mobility of the 2DEG materials with AlN/GaN superlattice structure at room-temperature is 1086cm 2/(V·s) at a sheet electron concentration of 7.5×10 12cm -2.