摘要
通过在波函数中考虑量子线的限制方向和非限制方向的相关性 ,计算了 Ga As/ Ga1 - x Alx As量子阱线中类氢杂质的束缚能和光致电离截面 .结果表明光致电离截面的大小受量子线尺寸的影响 ,并且对于相同尺寸的量子线 ,有限深势阱中杂质态的光致电离截面要比无限深势阱中的大 .与他人的结果比较发现 ,所选波函数改进了体系的束缚能 ,并使光致电离截面减小 。
The binding energy and the photon energy dependence of the photoionization cross-section are calculated for a hydrogenic impurity in GaAs/Ga 1-xAl xAs quantum well wires.The correlation between confined and non-confined direction of the wire in the variational wave function is taken into account.The results show that the photoionization cross-sections are affected by the width of the wire and that their magnitudes are larger than those in infinite potential quantum well wires.In comparison with previous's results,the variational wave function improves the binding energy and decreases the value of photoionization cross-sections of the hydrogenic impurities,which makes the results more reasonable.
基金
河北省自然科学基金 ( No.10 2 137)
河北省教育厅自然科学基金 ( No.2 0 0 10 4)资助项目~~
关键词
光致电离截面
束缚能
类氢杂质
量子阱线
photoionization cross-section
binding energy
hydrogenic impurity
quantum well wire
