摘要
研究了多孔硅的阴极还原表面处理技术 ,通过该技术获得了表面平滑度良好、稳定度高、抗压强度高和耐高温性能好且在空气中可以长期干燥保存的多孔硅样品 .在其表面上可以进行光刻、镀金等工艺 ,因此 。
The technique of porous silicon surface post-treatment using cathode reduction is reported.The porous silicon obtained by this technique is stable and has good mechanical intensity,endurance high-tempereture resistance,smoothness surface,and drying to be conserved for long time in the air.It can be gilded,photoengraved and can make devices,even electric circuit integrate.
基金
国家自然科学基金 (批准号 :6992 5 40 9)
上海市科学技术发展基金 (批准号 :0 15 2 110 66
0 12 2 610 2 8)资助项目~~
关键词
多孔硅
阴极还原
表面处理技术
porous silicon
cathode reduction
the surface post-treatment technique
