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Fabrication of thick BOX SOI by Smart-cut technology

Fabrication of thick BOX SOI by Smart-cut technology
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摘要 A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good. A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron mi-croscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimen-tal results demonstrate that both structural and electrical properties of the SOI structure are very good.
作者 WU Yan-Jun, ZHANG Miao, AN Zheng-Hua, LIN Cheng-Lu(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology,the Chinese Academy of Sciences, Shanghai 200050)
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2003年第2期115-118,共4页 核技术（英文）
基金 Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403)
关键词 灵活切割技术 微观结构 截面透射电子显微镜 XTEM 电学特性 绝缘硅片 SOI SOI, Thick BOX, Smart-cut
分类号 TN304.05 [电子电信—物理电子学]
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参考文献10

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Nuclear Science and Techniques
2003年 第2期

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