摘要
自从80年代金刚石薄膜的低压化学汽相淀积获得成功以来,人们对用金刚石薄膜制作高温、高速和大功率器件产生了浓厚的兴趣,因为金刚石的禁带宽,载流子迁移率高,同时具有优异的热学、光学和力学性质.本文对金刚石的电子学特征和金刚石器件的研制现伏作了评述,对发展金刚石器件的若干问题特别是金刚石薄膜的n型掺杂、金刚石膜的异质外延和降低缺陷浓度等作了分析和讨论.金刚石薄膜是一种潜在的新型半导体材料,但要实现器件应用尚需作大量的材料研究.
The success in preparation of diamond film by chemical vapor deposition has stimulated its use in electronic devices such as high-temperature, high-speed and high-power devices due to its wide bandgap, exceptional thermal conductivity and carrier mobility. In this paper the electronic properties of diamond and the research into the fabrication of diamond devi- ces are reviewed. Some problems in the development of such devices especially n-type do- ping and heteroepitaxial growth are discussed. It is be1ieved that diamond film is a pote- ntial semiconducting material but considerable research effort is still required.
出处
《物理》
CAS
北大核心
1992年第1期43-47,共5页
Physics