新型量子器件──共振隧穿二极管和三极管的原理及应用前景

Quantum Resonant Tunneling Devices

量子器件是近年来电子器件研制的一个前沿领域．本文从电子共振隧穿双势垒的基本概念出发，介绍在此基础上发展起来的一类重要的量子器件，即量子共振隧穿二极管和三极管的基本原理．现在巳有可在室温下工作的这类器件原型，本文以两个具体的实例说明这类新型量子器件作为功能性器件的巨大潜力．

The principles of quantum resonant tunneling diodes and transistors are discussed based on the concept of resonant tunneling of electrons through a double barrier. A prototype of such quantum devices which can operate at room temperature is reported. Potential applications of these quantum devices as functional devices are also briefly discussed.