摘要
采用本征激励方法,对超低旁瓣阵列天线中互耦效应的影响进行了研究。推导了天线电流分布的pocklington积分方程,介绍了矩量法求解各阵元的电流分布的方法。计算了天线阵列各单元的本征激励方向图。在此基础上,采用阵列本征激励分析方法对Chebeshev天线阵进行了互耦分析和修正。模拟了不同主旁瓣相对电平超低旁瓣天线的方向图及其与最高旁瓣电平的关系曲线,并给出了相应的修正结果。讨论了不同单元数目的天线阵,互耦所导致的影响。结果表明天线阵的主旁瓣相对电平越低、天线阵单元数目越少,互耦的影响越大。可以看出,采用的本征激励方法是高速的和有效的。
In the paper, effects of mutual coupling on the ultra-low side-lobe arrays are investigated with the Eigen-driven analysis method. The equation of Pocklington is demonstrated, and MoM for solving the equation is introduced. The eigen-driven analysis method is given, which is good at simulating the effect of mutual coupling between arrays. Based on this, Chebeshev array is analyzed, and the effect of mutual coupling on the peak side-lobe level is given. The effects of the number of antennas on mutual coupling are analyzed. Simulation results demonstrate that the effects of mutual coupling on the arrays can be compensated effectively, and the effects of mutual coupling on arrays are more severe with less antennas and lower relative side-lobe level. The results presented here show the Eigen-driven analysis method is much more convenient,contrary to some early claims.
出处
《哈尔滨工程大学学报》
EI
CAS
CSCD
2003年第6期673-676,共4页
Journal of Harbin Engineering University
关键词
矩量法
本征激励法
互耦
超低旁瓣阵列天线
method of moments
eigen-driven analysis method
mutual coupling
ultralow sidelobe arrays