摘要
本文讨论n-GaAs表面采用H_2O_2-H_2SO_4系光加速腐蚀形成衍射光栅的方法,以及Ag/n-GaAs肖脱基势垒二极管表面等离振子电磁耦子发光的测定。
The method to produce diffraction gratings by H2O2-H2SO4 photo-accelerated etching on the surface of n-GaAs and measuring of light emission by surface pla smon polariton from an Ag/n-GaAs Schottky barrier diode are discussed in this paper.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期282-287,共6页
Acta Physica Sinica