非晶硅太阳电池的X射线辐照效应及其低能域光电流光谱观测

X-RAY IRRADIATION EFFECT IN a-Si SOLAR CELL AND ITS BELOW-GAP PHOTOCURRENT SPECTROSCOPY OBSERVATION

本文叙述氢化非晶硅(a-Si:H以下简称非晶硅或a-Si)太阳电池经不同剂量的X射线辐照后光电转换性能的变化情况,还用低能域(入射光子能量hv小于非晶硅光学能隙)光电流光谱法观测了经X射线辐照后,非晶硅太阳电池中局域能级的增加状况,为非晶硅太阳电池将来在航天技术中的应用提供实验数据,实验表明,X射线的辐照效应比可见光强得多,故它可以用来快速鉴定各种非晶硅太阳电池的长期稳定性。

X-ray irradiation effect in hydrogenated amorphous silicon (a-Si:H or a-Si) solar cell has been observed. The results show that the photovoltaic characteristics decrease with the increasing of X-ray irradiation dose at first, and then tend to a steady state. By the below-gap photocurrent spectroscopy measurement, the change of defect density in a-Si induced by X-ray irradiation was studied. The results show that the defect density increase with the X-ray irradiation dose.