P_2S_5/NH_4OH处理GaAs(100)表面的电子能谱研究

ELECTRONIC SPECTROSCOPY STUDIES OF P_2S_5/NH_4OH TREATED GaAs(100) SURFACE

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P_2S_5/NH_4OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P_2S_5/NH_4OH溶液处理后,GaAs表面处Ga_2O_3和As_2O_3氧化物消失了,而生成硫化镓和硫化砷。于是,降低了表面电子态密度,改善了GaAs表面的电学和光学性能。

The microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy(XPS). AES reveals that only phosphorus and sulfur, but no oxygen, are contain-ed in the interface between passivation film and GaAs substrate. Using XPS, it is found that both Ga2O3 and As2O3 on the GaAs surface are removed by the P2S5/NH4OH treatment, moro-ver, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of surfacer state density and improving both electronic and optical properties of GaAs surface.