低剂量磷离子注入快速退火硅中的缺陷研究

STUDY OF DEFECTS IN LOW-DOSE P^+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON

本文对低剂量磷离子注入硅经快速热退火后的缺陷特性进行研究。600℃退火就能基本激活注入离子。800℃以下退火样品中的缺陷主要是离子注入形成的辐射损伤缺陷。800℃以上退火样品中存在位错缺陷。位错的形成与离子注入引进的损伤和淬火过程中的热应力有关。1100℃退火样品中的缺陷浓度迅速增大,热应力在硅内部产生大量的滑移位错。

Defects charactistics of low-dose p+ implanted silicon after rapid thermal annealing (RTA) was studied. RTA at 600℃ can activate most implanted ions. The defects in samples after RTA below 800℃ are found mainly the ion-implantation induced damage defects. Dislocations are found in samples after RTA above 800℃. The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations. The concentration of defects in 1100℃RTA sample began to increace. Slip dislocations are induced by thermal stress in the wafer.