摘要
用离子注入技术制备Zn-Al扩散偶,在注入浓度小于溶解度的条件下,本文提出杂质原子在基体单相中扩散的理论模型。应用数值分析方法对这一模型求解,得到与实验相符的杂质原子扩散分布;利用离子注入产生的增强扩散现象,还求出沉积法难以得到的260—380℃温区内Zn原子在多晶Al中的扩散系数,弥补了传统方法的不足。
Zn-Al diffution couples were formed by ion implantation. The diffusion model of impurity atoms in single-phase region was suggested for the case that the implanted concentration was less than its solid solubility in host. Zn diffusion profiles calculated from this model with numerical method were in good agreement with the results of experiment. By the enhanced diffusion effect accompanied with ion implantation, the diffusion coefficients of Zn in polycrystalline Al between 260-380℃ were obtained, which were difficult to determine using conventional deposition method.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第9期1474-1481,共8页
Acta Physica Sinica
