变曲率弯晶的粒子退道行为

DECHANNELING EFFECTS OF CHARGED PARTICLES IN BENT CRYSTALS WITH VARYING CURVATURE

利用正弦平方势和变曲率的抛物线近似描写了弯曲硅单晶的粒子退道效应,进一步证实利用弯晶来偏转(或控制)带电粒子运动方向的可能性。导出弯晶的退道系数并讨论了它的可能应用。

In the paper, the sine-squared potential and the parabola approximations of a bent crystal with a varying curvature have been introduced to discribe the dechan-neling effects of charged particles moving in such a crystal Furthermore, we show the possibilities of detlecting charged particles by a bent crystal, derive rhe dechan-nelling fraction of such a crystal and discuss the possible applications.