直流等离子体化学汽相沉积法合成的金刚石膜的内应力研究

STUDIES OF INTERNAL STRESS IN DIAMOND FILMS PREPA-RED BY DC PLASMA CHEMICAL VAPOUR DEPOSITION

研究了直流等离子体化学汽相沉积(CVD)法合成的金刚石膜内应力随甲烷浓度、沉积温度的变化关系。实验研究表明,金刚石膜的总内应力随沉积条件变化十分敏感。压缩应力是由非金刚石成份及氢等杂质引起的,而伸张应力可由膜中高密度的微空和内面积导致的晶粒间界弛豫模型来解释。

The internal stress in diamond thin films deposited by DC plasma CVD was studied as a function of methane concentration and deposited temperature. Experimental results have shown that total stress in diamond thin films is sensitive to the deposition conditions. The results also indicate that the compressive stress can be explained in terms of amorphous state carbon and hydrogen, and tensile stress is ascribed to the grain boundary relaxation model due to high internal surface area and micristructure with voids.