大规模集成电路总剂量效应测试方法初探

Test methods of total dose effects in very large scale integrated circuits

提出了初步的大规模集成电路总剂量效应测试方法。在监测器件和电路功能参数的同时 ,监测器件功耗电流的变化情况 ,分析数据错误与器件功耗电流变化的关系及其总剂量效应机理。给出了大规模集成电路 :静态随机存取存储器 (SRAM)、电擦除电编程只读存储器 (EEPROM)、闪速存储器 (FLASHROM)和微处理器 (CPU)的6 0 Coγ总剂量效应实验的结果 .

A kind of test method of total dose effects (TDE) is presented for very large scale integrated circuits (VLSI). The consumption current of devices is measured while function parameters of devices (or circuits) are measured. Then the relation between data errors and consumption current can be analyzed and mechanism of TDE in VLSI can be proposed. Experimental results of 60 Co γ TDEs are given for SRAMs, EEPROMs, FLASH ROMs and a kind of CPU.