摘要
淀积合金薄膜的 Si 片退火时,通过固相反应在界面处生成接触过渡层,其组分与结构均不同于一般条件下生成的硅化物.本文介绍了 Pd 合金/Si接触过渡层的形成工艺,对接触过渡层的结构组分进行了分析与讨论.基于“相分层”效应,可用掺氮或掺氧的方法提高阻挡层的质量.
During the baking-out of the metallized Si substrate with alloy film,in terms of solid
phase reaction a transitive layer of contact is formed.The contact layer has a different
structure and composition than common silicides.Formation technology of transitive lay-
ers of Pd alloy/Si contacts is presented and results of their structure and composition an-
alyses are discussed in this paper.Based on the“phase layer-parting”effect,the quality of
barriers can be improved by embedding N_2 or O_2.
出处
《西安电子科技大学学报》
EI
CAS
CSCD
北大核心
1992年第2期59-63,共5页
Journal of Xidian University
关键词
Pd合金
过渡层
相分层
集成电路
Pd alloy
transitive layer of contact
phase layer-parting