硅器件工艺中的铁污染及其对器件特性的影响

Fe CONTAMINATION IN THE SILICON DEVICE TECHNOLOGY AND ITS EFFECT ON SILICON DEVICE CHARACTERISTICS

文中研究了硅器件的异常产生电流和异常特性,揭示了它们的产生原因均是硅器件中有铁污染。

In this paper the abnormal generation current and the abnormal characteristics of the silicon de- vice are investigated, and both of them are shown to result from the contamination of Fe in the silicon device.