含硼金刚石的合成与性能

PREPARATION AND PROPERTIES ANALYSIS OF BORON DOPED DIAMOND USING B-DOPED GICS AS CARBON SOURCES

本文以H3BO3为插层剂,分别采用电解氧化法以及熔盐法制备石墨层间化合物(graphite intercalation compounds)GICs,并以此为碳源进行高压合成含硼金刚石的研究,通过X射线衍射分析研究GICs的阶结构。对所获得的金刚石进行FTIR及拉曼光谱分析以及SEM观察,并测定其抗氧化性及电阻。结果表明,采用电解氧化法和熔盐法均可制备混合阶数的H3BO3-GICs,经热处理净化后,作为碳源,在1350℃、5GPa的条件下合成,获得含硼金刚石,其氧化性及导电性均有提高。

This paper presented a new method for synthesising B-doped diamond using graphite intercalation compounds (GICs). GICs had been prepared by electrochemical and molten salts methods using H3 BO3 as intercalant. The stage structures of GICs were analyzed by XRD. Diamond was synthesized under high pressure and high temperature conditions using B-doped GICs as carbon sources. The structure and properties of the synthesized diamond were investigated using Fourier transform infrared absorption spectra (FTIR), Raman spectra and scanning electron microscope (SEM) . The oxidation temperature and the resistance of the synthesized diamond were measured. The results showed that B-doped black diamond grits can be synthesized using H3BO3-GICs with the mixed stages. Boron doping in diamond can heighten its oxidation temperature and lower its resistance.