纳米MOS器件中的超浅结和相关离子掺杂新技术的发展

Ultra-shallow Junction Used in Nano Devices and Development of Related Ion-doping Techniques

MOS器件特征尺寸进入纳米领域时如何形成超浅结是一个重要的挑战。文中讨论了纳米 MOS器件对超浅结离子束掺杂技术的特殊要求以及发展超浅结的主要途径 ,介绍了目前超浅结离子掺杂新技术的最新发展 ,并对其前景进行了展望。

How to realize the ultra-shallow j unction is an important challenge when the feature size of the MOS devices is sc aling down into the nano regime. In this paper, the especial requirements for th e deep sub-um MOS devices to develop the doping technique of the ultra-shallow junction have been discussed, and some new methods for realization of the ultra -shallow junction have been introduced. Finally, the potential application of t hese new techniques has been prospected.